Zitu provides AWG type CWDM4/LAN-WDM assembly for 100G, 200G or 400G high data rate transceivers based on silicon or Quartz substrate. It has compact size and easy-to-assemble structure, and good reliability, which provide excellent solution for high speed active optical module. AWG assembly can be used in FR4 and LR4 optical module based on different channel space.

Characteristics

•  High Reliability
•  Low Insertion
•  RoHS Compliant
•  Low Temperature Correlation

 
Application

•  Data Center
•  WDM Transmission
   

 

 
AWG CWDM-4 Specifications:

Item	Condition/Measure Method	Unit	Type
			Mux	Demux
Channel			4
Spacing		nm	20
CWL	25℃@3dB Center	nm	CH1：1271
			CH2：1291
			CH3：1311
			CH4：1331
CWL Accuracy	25℃@3dB Center	nm	±1
1dB Bandwidth		nm	≥10	≥12
3dB Bandwidth		nm	≥14	≥15
Uniformity	All chip ILmax-ILmin	dB	≤1.5	≤1.0
Insertion Loss	@Passband±5nm；Including PDL and fiber coupling	dB	4.5	≤2.5
Polarization Dependent Loss	Passband±1nm	dB	≤0.5
Ripple	Passband±5nm	dB	≤1.0
Return Loss		dB	≥40
Isolation（Adjacent）	Passband±6.5nm	dB	/	≥20
Isolation（Non-Adjacent）	Passband±6.5nm	dB	/	≥30
Polarization Mode Dispersion		PS	≤0.15	≤0.15
Temperature Dependent Loss	-50~+85℃	dB	≤0.5	≤0.5
Wavelength thermal stability		Nm/℃	≤0.012	/
Channel Pitch		um	500	250
Input/Output Side			Identical Side	Opposite Side
Chip Size	Max Size	mm	≤7.6´4.0	≤10.0´1.6
Chip Height		mm	≤1.3	≤1.0
Polishing angle		°	NA	41
Operating Temperature		℃	-5~+80
Storage Temperature		℃	-40~+85

 

 
AWG LAN WDM4 Specifications:

Item	Condition/Measure Method	Unit	Type
			Mux	Demux
Channel			4
Spacing		GHz	800
CWL	25℃@3dB Center	nm	CH1：1295.56nm(231.4THz)
			CH2：1300.05nm(230.6THz)
			CH3：1304.58nm(229.8THz)
			CH4：1309.14nm(229.0THz)
CWL Accuracy	25℃@3dB Center	nm	±0.3
1dB Bandwidth		nm	≥2.2	≥2.8
Unifomity	All chip ILmax-ILmin	dB	≤1.5	≤1.0
Insertion Loss	@Passband±5nm；Including PDL and fiber coupling	dB	4.5	≤2.5
Polarization Dependent Loss	Passband±1nm	dB	≤0.5
Ripple	Passband±5nm	dB	≤1.25
Return Loss		dB	≥40
Isolation（Adjacent）	Passband±6.5nm	dB	/	≥20
Isolation（Non-Adjacent）	Passband±6.5nm	dB	/	≥30
Polarization Mode Dispersion		PS	≤0.2	≤0.2
Temperature Dependent Loss	-50~+85℃	dB	≤0.5	≤0.5
Wavelength thermal stability		Nm/℃	≤0.012	/
Channel Pitch		um	250	250
Chip Size	Max Size	mm	7.6×2.6	9.80×2.6
Chip Height		mm	≤1.3	≤1.0
Polishing angle		°	NA	41
Operating Temperature		℃	-5~+80
Storage Temperature		℃	-40~+85